Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem
← Back to work

Works citing this work

12 works

Work: On the theory of sublinear current-voltage characteristics of semiconductor structures

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleMaterial Science and ThermodynamicsSemiconductors200913 citations
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20109 citations
    ABI

  3. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20108 citations
    ABI

  4. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    ArticleSemiconductor materials and interfacesSemiconductors20098 citations
    ABI

  5. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    ArticleNear-Field Optical MicroscopyPhysics of the Solid State20147 citations
    ABI

  6. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 citations
    ABI

  7. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  8. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 citations
    ABI

  9. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    ArticleAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20232 citations
    ABI

  10. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19820 citations
    ABI

  11. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 citations
    ABI

  12. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 citations
    ABI