Н. Норкулов

Работ: 6

Tashkent State Technical University

1. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

   M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1994Цитирований: 7

   ABIABI:AkademIndex/openalex/1994.article.000008

2. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

   Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

   СтатьяSemiconductor materials and interfacesInorganic Materials2012Цитирований: 5

   ABIABI:AkademIndex/openalex/2012.article.000130

3. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

   М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

   СтатьяChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000255

4. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

   M. K. Bakhadirkhanov, С. Б. Исамов, Sh. N. Ibodullaev +2

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.004106

5. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

   Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.002687

6. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003073