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Работы, цитирующие эту работу

Работ: 14

Работа: Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

  1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    СтатьяMetal and Thin Film MechanicsTechnical Physics2013Цитирований: 15
    ABI

  2. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14
    ABI

  3. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

    D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 14
    ABI

  4. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  5. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5
    ABI

  6. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4
    ABI

  7. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
    ABI

  8. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 2
    ABI

  9. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 1
    ABI

  10. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0
    ABI

  11. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

    A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0
    ABI

  12. Study of the critical angle of channeling of active metal ions through thin aluminum films

    З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

    СтатьяIon-surface interactions and analysisПисьма в журнал технической физики2022Цитирований: 0
    ABI

  13. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  14. Effect of О&lt;sub&gt;2&lt;/sub&gt;&lt;sup&gt;+&lt;/sup&gt; Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
    ABI