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Works citing this work

14 works

Work: Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

  1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    ArticleMetal and Thin Film MechanicsTechnical Physics201315 citations
    ABI

  2. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 citations
    ABI

  3. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

    D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 citations
    ABI

  4. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 citations
    ABI

  5. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 citations
    ABI

  6. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    ArticleIon-surface interactions and analysisAIP conference proceedings20224 citations
    ABI

  7. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfacesMaterials Research Innovations20243 citations
    ABI

  8. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    ArticleIon-surface interactions and analysisAIP conference proceedings20222 citations
    ABI

  9. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 citations
    ABI

  10. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20220 citations
    ABI

  11. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

    A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20220 citations
    ABI

  12. Study of the critical angle of channeling of active metal ions through thin aluminum films

    З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

    ArticleIon-surface interactions and analysisПисьма в журнал технической физики20220 citations
    ABI

  13. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  14. Effect of О&lt;sub&gt;2&lt;/sub&gt;&lt;sup&gt;+&lt;/sup&gt; Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    ArticleIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI