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Работы, на которые ссылается эта работа

Работ: 14

Работа: The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Статья2011Цитирований: 11
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Статья2012Цитирований: 6
    ABI

  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Статья2011Цитирований: 6
    ABI

  4. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  5. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Статья2018Цитирований: 5
    ABI

  6. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4
    ABI

  7. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Статья2018Цитирований: 4
    ABI

  8. Self-Consistent Simulation of Heating Effects in Nanoscale Devices

    Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva

    Статья2009Цитирований: 3
    ABI

  9. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

    J. P. Campbell, Lihua Yu, Kin P. Cheung +4

    Статья2009Цитирований: 3
    ABI

  10. Multi-gate SOI MOSFETs

    J.-P. Colinge

    Статья2007Цитирований: 2
    ABI

  11. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects

    H. Ferhati, Fouzi Douak, F. Djeffal

    Статья2017Цитирований: 2
    ABI

  12. Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

    Amrish Kumar, Abhinav Gupta, Sanjeev Rai

    Статья2018Цитирований: 2
    ABI

  13. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu +3

    Статья2019Цитирований: 2
    ABI

  14. Без названия

    ДругоеЦитирований: 1
    ABI