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Работы, на которые ссылается эта работа

Работ: 16

Работа: Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  3. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  4. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 19
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  6. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14
    ABI

  7. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2017Цитирований: 14
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  9. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  10. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

    Shinji Takeoka, Minoru Fujii, Shinji Hayashi

    Статья2000Цитирований: 7
    ABI

  11. Specific features of the formation of arrays of silver clusters from a thin film on a SiO2 surface

    Д. Г. Громов, O. V. Pyatilova, S. V. Bulyarskiĭ +2

    Статья2013Цитирований: 6
    ABI

  12. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

    Yu. K. Undalov, Е. И. Теруков

    Статья2015Цитирований: 5
    ABI

  13. Сrystallinity and size control of silicon nanoparticles synthesized from monosilane in glow-discharge plasma

    Р. Х. Ашуров, T. K. Turdaliev, I. Kh. Ashurov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2017Цитирований: 4
    ABI

  14. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Статья2000Цитирований: 4
    ABI

  15. Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

    M. Hamasaki, T. Adachi, S. Wakayama +1

    Статья1978Цитирований: 2
    ABI

  16. Без названия

    ДругоеЦитирований: 1
    ABI