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Ушбу иш иқтибос қилган ишлар

16 та иш

Иш: Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 иқтибос
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  3. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    МақолаIon-surface interactions and analysisTechnical Physics201119 иқтибос
    ABI

  4. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201319 иқтибос
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос
    ABI

  6. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    МақолаSemiconductor materials and interfacesMaterials Science and Engineering B200314 иқтибос
    ABI

  7. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 иқтибос
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  9. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20149 иқтибос
    ABI

  10. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

    Shinji Takeoka, Minoru Fujii, Shinji Hayashi

    Мақола20007 иқтибос
    ABI

  11. Specific features of the formation of arrays of silver clusters from a thin film on a SiO2 surface

    Д. Г. Громов, O. V. Pyatilova, S. V. Bulyarskiĭ +2

    Мақола20136 иқтибос
    ABI

  12. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

    Yu. K. Undalov, Е. И. Теруков

    Мақола20155 иқтибос
    ABI

  13. Сrystallinity and size control of silicon nanoparticles synthesized from monosilane in glow-discharge plasma

    Р. Х. Ашуров, T. K. Turdaliev, I. Kh. Ashurov +1

    МақолаSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20174 иқтибос
    ABI

  14. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Мақола20004 иқтибос
    ABI

  15. Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

    M. Hamasaki, T. Adachi, S. Wakayama +1

    Мақола19782 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI