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Works cited by this work

16 works

Work: Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  3. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  4. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201319 citations
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  6. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    ArticleSemiconductor materials and interfacesMaterials Science and Engineering B200314 citations
    ABI

  7. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 citations
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  9. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  10. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

    Shinji Takeoka, Minoru Fujii, Shinji Hayashi

    Article20007 citations
    ABI

  11. Specific features of the formation of arrays of silver clusters from a thin film on a SiO2 surface

    Д. Г. Громов, O. V. Pyatilova, S. V. Bulyarskiĭ +2

    Article20136 citations
    ABI

  12. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

    Yu. K. Undalov, Е. И. Теруков

    Article20155 citations
    ABI

  13. Сrystallinity and size control of silicon nanoparticles synthesized from monosilane in glow-discharge plasma

    Р. Х. Ашуров, T. K. Turdaliev, I. Kh. Ashurov +1

    ArticleSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20174 citations
    ABI

  14. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Article20004 citations
    ABI

  15. Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

    M. Hamasaki, T. Adachi, S. Wakayama +1

    Article19782 citations
    ABI

  16. Untitled

    Other1 citations
    ABI