Работы, на которые ссылается эта работа

Работ: 39

Работа: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14

   ABIABI:AkademIndex/openalex/2024.article.000600

2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

   Jo`shqin Abdullayev, I. B. Sapaev

   Статья2024Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.261553

3. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10

   ABIABI:AkademIndex/openalex/2024.article.000837

4. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9

   ABIABI:AkademIndex/openalex/2024.article.000836

5. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

   Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

   СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9

   ABIABI:AkademIndex/openalex/2025.article.000546

6. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000607

7. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

   Jo`shqin Abdullayev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000647

8. Regularized Solution of the Cauchy Problem in an Unbounded Domain

   Davron Aslonqulovich Juraev, Ali Shokri, Daniela Marian

   Статья2022Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.335606

9. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

   СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.001003

10. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Статья2024Цитирований: 6

    ABIABI:AkademIndex/openalex/2026.other.303747

11. Solution of the Ill-Posed Cauchy Problem for Systems of Elliptic Type of the First Order

    Davron Aslonqulovich Juraev, Ali Shokri, Daniela Marian

    Статья2022Цитирований: 6

    ABIABI:AkademIndex/openalex/2026.other.335604

12. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

    ABIABI:AkademIndex/openalex/2025.article.000840

13. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

    ABIABI:AkademIndex/openalex/2025.article.000841

14. Si microwire-array solar cells

    Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6

    Статья2010Цитирований: 5

    ABIABI:AkademIndex/openalex/2026.other.228631

15. Coverage properties of silicon nitride film prepared by the Cat-CVD method

    S. Osono, Y. Uchiyama, Makiko Kitazoe +5

    Статья2003Цитирований: 3

    ABIABI:AkademIndex/openalex/2026.other.228623

16. Silicon Nanowires for Photovoltaic Solar Energy Conversion

    Kui‐Qing Peng, Shuit‐Tong Lee

    Обзорная статья2010Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.171725

17. Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

    Antonio Alessio Leonardi, Maria José Lo Faro, Alessia Irrera

    Обзорная статья2021Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.228646

18. Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode

    Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello

    Статья2024Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.335610

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    ABIABI:AkademIndex/openalex/2026.other.335591

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    ABIABI:AkademIndex/openalex/2026.other.335594