Работы, цитирующие эту работу

Работ: 5

Работа: Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Obtaining higher manganese silicide films with high thermoelectric properties

   I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.253378

3. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

   M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.213643

4. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

   А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.001910

5. Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

   I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.009630