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Работы, на которые ссылается эта работа

Работ: 21

Работа: The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  4. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  5. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    СтатьяInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2000Цитирований: 16
    ABI

  6. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  7. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  9. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  10. Structure and transport properties of the spark plasma sintered barium cerate based proton conductor

    Sergii A. Sergiienko, V.A. Kolotygin, Nataliya Shcherban +5

    Статья2017Цитирований: 5
    ABI

  11. On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn

    F. Yu. Solomkin, Andrey Orekhov, S. V. Novikov +7

    Статья2019Цитирований: 3
    ABI

  12. Structure and Thermoelectric Properties of CoSi-Based Film Composites

    V S Kuznetsova, С. В. Новиков, Charan K. Nichenametla +2

    Статья2019Цитирований: 3
    ABI

  13. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

    Ф. Ф. Комаров, G. A. Ismailova, O. V. Milchanin +3

    Статья2015Цитирований: 3
    ABI

  14. Isostructural BaSi<sub>2</sub>, BaGe<sub>2</sub> and SrGe<sub>2</sub>: electronic and optical properties

    Д. Б. Мигас, В. Л. Шапошников, В. Е. Борисенко

    Статья2007Цитирований: 2
    ABI

  15. MXene-containing composite electrodes for hydrogen evolution: Material design aspects and approaches for electrode fabrication

    Sergii A. Sergiienko, Daniela Lopes, G. Constantinescu +9

    СтатьяMXene and MAX Phase MaterialsInternational Journal of Hydrogen Energy2021Цитирований: 1
    ABI

  16. Без названия

    ДругоеЦитирований: 1
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI