Работы, цитирующие эту работу

Работ: 4

Работа: Methods for measuring parameters of semiconductor materials

1. Formation of thin Crsi ₂ films by the solid-phase ion-plasma method and their thermoelectric properties

   I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

   СтатьяAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations2024Цитирований: 9

   ABIABI:AkademIndex/openalex/2024.article.000742

2. Magnetic resistance of silicon specimens with manganese impurities

   Э. У. Арзикулов, Zh. T. Ruzimuradov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Communications Technology and Electronics2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000232

3. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000362

4. Study of infrared quenching in silicide-silicon-silicide structures

   A. T. Mamadalimov, Makhmudhodzha Isaev

   СтатьяSemiconductor materials and interfacesAdvanced Physical Research2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002817