Работы, цитирующие эту работу

Работ: 6

Работа: Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

1. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

   S. B. Donaev

   СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.402218

2. Electronic and Optical Properties of NiSi2/Si Nanofilms

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

   СтатьяSurface and Thin Film PhenomenaTechnical Physics2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.402216

3. Obtaining nanoscale CoSiO/Si/CoSi₂ systems for increasing the range of light ray absorption energy

   S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

   СтатьяSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.213642

4. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

   З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.402219

5. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

   Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

   СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.492991

6. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.007102