Работы, цитирующие эту работу

Работ: 4

Работа: Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000603

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488

3. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.001438

4. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004230