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Работы, на которые ссылается эта работа

Работ: 15

Работа: Influence of Doping Conditions on the Properties of Nickel Atom Clusters

  1. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2006Цитирований: 9
    ABI

  2. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8
    ABI

  3. X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons

    Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8
    ABI

  4. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8
    ABI

  5. Investigations of Nonlinear Optical Properties of Lithium Niobate Crystals

    Sharifa B. Utamuradova, Zakirjan T. Azamatov, Murodjon A. Yuldoshev +2

    СтатьяPhotorefractive and Nonlinear OpticsEast European Journal of Physics2023Цитирований: 6
    ABI

  6. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    СтатьяGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry2011Цитирований: 5
    ABI

  7. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    СтатьяMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry2011Цитирований: 4
    ABI

  8. On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

    Shakhrukh Kh. Daliev, Fayzulla A. Saparov

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 3
    ABI

  9. Non-recombination injection mode

    A. Yu. Leyderman, R. A. Ayukhanov, R.M. Turmanova +2

    Статья2021Цитирований: 3
    ABI

  10. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

    С. И. Власов

    СтатьяAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics2010Цитирований: 2
    ABI

  11. Influence of γ – radiation on the properties of silicon with clusters impurity atoms of manganese and nickel

    Z.M. Saparniyazova, Temur Ismaylov, Gulnaza Abdireymova +2

    СтатьяEngineering and Agricultural InnovationsE3S Web of Conferences2021Цитирований: 2
    ABI

  12. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

    Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2
    ABI

  13. Enhancing the Perfection of a Silicon Crystal Doped with Nickel and Zinc Impurities

    Daryabay Muratbaevich Esbergenov, Elmira M. Naurzalieva, Sabirbay A. Tursinbaev

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2
    ABI

  14. Analysis of electricity loss calculation methods in distribution networks

    Abat Muratov, Z.M. Saparniyazova, Iles Bakhadirov +1

    СтатьяEngineering and Agricultural InnovationsE3S Web of Conferences2021Цитирований: 1
    ABI

  15. Без названия

    ДругоеЦитирований: 1
    ABI