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Д. А. Ташмухамедова

52 та иш

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    МақолаSurface and Thin Film PhenomenaTechnical Physics20193 иқтибос
    ABI

  2. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    МақолаTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  3. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    МақолаAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics20241 иқтибос
    ABI

  4. Impact of Ruthenium Diffusion on the Electrical Properties of Thick Film Resistors

    Avazbek T. Dekhkonov, G. Abdurakhmanov, Mukhriddin E. Tursunov +5

    МақолаElectrical and Thermal Properties of MaterialsEast European Journal of Physics20251 иқтибос
    ABI

  5. The profiles of barium distributions in GaAs doped by low energy barium ions

    Д. А. Ташмухамедова, F.G. Dzhurabekova, Mirzhalilova +1

    МақолаIon-surface interactions and analysis19970 иқтибос
    ABI

  6. Modification of the physical and chemical properties of GaAs/Ge surface epitaxy films by ion implantation

    Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisSurface and Coatings Technology20020 иқтибос
    ABI

  7. The influence of ion implantation on emission characteristics conducting and superconducting materials

    Б. Е. Умирзаков, Д. А. Ташмухамедова

    МақолаPlasma Diagnostics and Applications20020 иқтибос
    ABI

  8. Application of low-energy ion-implantation for creation of nano films on the surface of dielectric films CaF 2

    Д. А. Ташмухамедова

    МақолаMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20040 иқтибос
    ABI

  9. Influence of ion and laser treatment on composition, structure and properties of epitaxy GaF 2 films

    Д. А. Ташмухамедова

    МақолаInorganic Fluorides and Related Compounds20040 иқтибос
    ABI

  10. Obtained of nanocrystals and nanofilms CoSi 2 /Si by ion-implantations

    Д. А. Ташмухамедова

    МақолаSemiconductor materials and interfaces20050 иқтибос
    ABI

  11. Application of ion implantation for obtaining the nanofilms of metal silicides

    Б. Е. Умирзаков, Д. А. Ташмухамедова, B.A. Kadyrov

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20080 иқтибос
    ABI

  12. Electronic and crystal structure of nanodimensional phases of the metals created on the surface of MgO films

    M. B. Yusupjanova, Д. А. Ташмухамедова

    МақолаMagnesium Oxide Properties and ApplicationsUzbekiston Fizika Zhurnali20170 иқтибос
    ABI

  13. Creation of a mathematical model to identify short circuits in power lines

    A.N. Alyunov, O.S. Vyatkina, Irina Akhmetova +2

    МақолаElectric Power Systems and ControlE3S Web of Conferences20190 иқтибос
    ABI

  14. Effect of Implantation of Ba+ Ions on the Composition, Electronic and Crystal Structure of W(111) and WO2 Surfaces

    Б. Е. Умирзаков, Д. А. Ташмухамедова, F. Ya. Khudaykulov

    МақолаGas Sensing Nanomaterials and SensorsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20220 иқтибос
    ABI

  15. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

    МақолаIon-surface interactions and analysisЖурнал технической физики20220 иқтибос
    ABI

  16. Impurity Bands and Density of State in Doped Silicate Glasses with Metal Oxides (RuO2, CuO, MnO2)

    G. Abdurakhmanov, A. T. Dekhkanov, М. Н. Турсунов +1

    МақолаGlass properties and applicationsPhysical Science International Journal20230 иқтибос
    ABI

  17. Peculiarities of Photoelectron Spectra of Ge Implanted with Na-=SUP=-+-=/SUP=- Ions

    S. T. Abraeva, Д. А. Ташмухамедова, M. B. Yusupjanova +1

    МақолаIon-surface interactions and analysisПисьма в журнал технической физики20230 иқтибос
    ABI

  18. Effect of Ba+-Ion Implantation on the Composition and Electronic Structure of Silicate Glasses

    Д. А. Ташмухамедова, A. N. Urokov, G. Abdurakhmanov +1

    МақолаGlass properties and applicationsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос
    ABI

  19. Impact of bombardment by Ar<sup>+</sup>, Na<sup>+</sup> and <i>O</i><sub>2</sub><sup>+</sup> ions on spectra of elastically scattered electrons of single-crystal Ge

    S. T. Abraeva, Д. А. Ташмухамедова, Soadat Gulyamova +2

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос
    ABI

  20. The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

    A. A. Abduvayitov, Gunel Imanova, Д. А. Ташмухамедова +2

    МақолаElectron and X-Ray Spectroscopy TechniquesScientific Herald of Uzhhorod University Series Physics20230 иқтибос
    ABI

  21. Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

    S. T. Abraeva, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос
    ABI

  22. Influence of Implantation of Ions Ba&lt;sup&gt;+&lt;/sup&gt; on the Composition and Electronic Structure of Silicate Glasses

    Д. А. Ташмухамедова, A. N. Urokov, G. Abdurakhmanov +1

    МақолаGlass properties and applicationsПоверхность Рентгеновские синхротронные и нейтронные исследования20230 иқтибос
    ABI

  23. Effect of Electron Bombardment on the Composition and Structure of CaF2/Si(111) Films

    A. A. Abduvayitov, Д. А. Ташмухамедова, Б. Е. Умирзаков +1

    МақолаSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  24. Analysis of the Influence of Formation of Pd Silicides on Surface Layers of Si on the Diffusion of Atoms of Contacting Metal

    Д. А. Ташмухамедова, Kh.E. Abdiev, Soadat Gulyamova +2

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос
    ABI

  25. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI