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Иш: Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков
МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибосABIFormation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation
S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1
МақолаIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 иқтибосABIMBE growth of GaP on a Si substrate
M. S. Sobolev, А. А. Лазаренко, E. V. Nikitina +3
Мақола20154 иқтибосABI