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24 та иш

Иш: Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. Modeling Temperature Dependence of The Combined Density of States in Heterostructures with Quantum Wells Under the Influence of a Quantizing Magnetic Field

    У. И. Эркабоев, Sherzodjon A. Ruzaliev, R. G. Rakhimov +1

    Мақола20248 иқтибос
    ABI

  3. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос
    ABI

  4. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    МақолаAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 иқтибос
    ABI

  5. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Мақола20185 иқтибос
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  7. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    МақолаSemiconductor materials and devicesDoklady Physics20074 иқтибос
    ABI

  8. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Мақола20114 иқтибос
    ABI

  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    МақолаSemiconductor materials and devicesApplied Sciences20203 иқтибос
    ABI

  10. Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer, Tibor Grasser, Ph. Roussel +6

    Мақола20103 иқтибос
    ABI

  11. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

    Ivan A. Starkov, A. S. Starkov

    Мақола20133 иқтибос
    ABI

  12. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

    J. Martín-Martínez, Simone Gerardin, E. Amat +5

    Мақола20093 иқтибос
    ABI

  13. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

    Мақола20183 иқтибос
    ABI

  14. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос
    ABI

  15. Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance

    М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, S. R. Boydedayev +1

    МақолаGraphene research and applicationsEast European Journal of Physics20242 иқтибос
    ABI

  16. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 иқтибос
    ABI

  17. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    МақолаSemiconductor materials and devicesApplied Sciences20202 иқтибос
    ABI

  18. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

    Asen Asenov, R. Balasubramaniam, A. R. Brown +1

    Мақола20032 иқтибос
    ABI

  19. Сарлавҳасиз

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