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Ушбу ишга иқтибос қилган ишлар

21 та иш

Иш: On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

  1. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesModern Physics Letters B202317 иқтибос
    ABI

  2. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос
    ABI

  3. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    МақолаX-ray Diffraction in CrystallographyJournal of Crystal Growth20248 иқтибос
    ABI

  4. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    МақолаElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 иқтибос
    ABI

  5. Study of structure formation processes in matrices of mixed components with reinforcing natural fillers

    Umida Ziyamukhamedova, Lutfullo Bakirov, S. B. Donaev +2

    МақолаMaterial Properties and ApplicationsE3S Web of Conferences20236 иқтибос
    ABI

  6. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    МақолаSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 иқтибос
    ABI

  7. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос
    ABI

  8. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    МақолаSemiconductor materials and interfacesTechnical Physics20194 иқтибос
    ABI

  9. Influence of implantation of O2+ ions on the composition and electronic structure of the W(111) surface

    З. А. Исаханов, Б. Е. Умирзаков, D.Kh. Nabiev +5

    МақолаTransition Metal Oxide NanomaterialsMicro and Nano Systems Letters20242 иқтибос
    ABI

  10. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 иқтибос
    ABI

  11. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    МақолаIon-surface interactions and analysisAIP conference proceedings20222 иқтибос
    ABI

  12. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

    Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

    МақолаIon-surface interactions and analysisEurasian journal of physics and functional materials20232 иқтибос
    ABI

  13. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 иқтибос
    ABI

  14. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science20201 иқтибос
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос
    ABI

  16. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20220 иқтибос
    ABI

  17. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос
    ABI

  18. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос
    ABI

  19. Regional Variations in Mechanical Properties of Porcine Leptomeninges

    Chenyi Lei, Wenyuan Shao, Xi Yuan +8

    МақолаAutomotive and Human Injury BiomechanicsCyborg and Bionic Systems20250 иқтибос
    ABI

  20. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesMaterials Today Communications20260 иқтибос
    ABI

  21. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

    B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3

    МақолаChemical and Physical Properties of MaterialsPhysics Letters A20260 иқтибос
    ABI