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Ушбу ишга иқтибос қилган ишлар

8 та иш

Иш: On the mechanism of appearance of space-charge-limited current in higher manganese silicide (HMS)--HMS and HMS--M structures

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  2. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    МақолаSemiconductor materials and interfacesSemiconductor Science and Technology199911 иқтибос
    ABI

  3. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20114 иқтибос
    ABI

  4. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    МақолаSemiconductor materials and interfacesTechnical Physics20142 иқтибос
    ABI

  5. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesTechnical Physics20132 иқтибос
    ABI

  6. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20021 иқтибос
    ABI

  7. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesSemiconductors20151 иқтибос
    ABI

  8. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesTechnical Physics20131 иқтибос
    ABI