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Ушбу ишга иқтибос қилган ишлар

25 та иш

Иш: Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос
    ABI

  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    МақолаQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 иқтибос
    ABI

  3. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
    ABI

  4. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос
    ABI

  5. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 иқтибос
    ABI

  6. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

    МақолаSemiconductor materials and interfacesApplied Solar Energy20166 иқтибос
    ABI

  7. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 иқтибос
    ABI

  8. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20165 иқтибос
    ABI

  9. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20174 иқтибос
    ABI

  10. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    МақолаAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 иқтибос
    ABI

  11. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI

  12. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI

  13. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20192 иқтибос
    ABI

  14. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    МақолаIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20202 иқтибос
    ABI

  15. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 иқтибос
    ABI

  16. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20091 иқтибос
    ABI

  17. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    МақолаSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 иқтибос
    ABI

  18. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

    МақолаPhase-change materials and chalcogenidesEast European Journal of Physics20251 иқтибос
    ABI

  19. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20071 иқтибос
    ABI

  20. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20081 иқтибос
    ABI

  21. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20080 иқтибос
    ABI

  22. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +1

    МақолаInsect and Pesticide ResearchApplied Solar Energy20090 иқтибос
    ABI

  23. Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

    А. С. Саидов, U. Kh. Rakhmonov, A. Yu. Leĭderman

    МақолаSemiconductor materials and interfacesApplied Solar Energy20180 иқтибос
    ABI

  24. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    МақолаSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 иқтибос
    ABI

  25. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

    SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

    МақолаSemiconductor materials and interfacesComputational nanotechnology20220 иқтибос
    ABI