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Иш: Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Китоб200258 иқтибос
    ABI

  2. Current Injection in Solids

    A. M. Stoneham

    Мақола197027 иқтибос
    ABI

  3. The physics of semiconductor devices

    H. L. Grubin

    Мақола197918 иқтибос
    ABI

  4. Current injection in solids

    Murray A. Lampert, Peter Mark

    Китоб197016 иқтибос
    ABI

  5. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос
    ABI

  6. Injection-based photodetectors

    І. М. Викулин, Ш. Д. Курмашев, V. I. Stafeev

    Мақола200811 иқтибос
    ABI

  7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20108 иқтибос
    ABI

  8. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Мақола19788 иқтибос
    ABI

  9. Semiconductors and Semimetals

    Боб19777 иқтибос
    ABI

  10. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 иқтибос
    ABI

  11. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19766 иқтибос
    ABI

  12. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 иқтибос
    ABI

  13. Photodetectors with a controllable photosensitivity spectrum

    Ш. А. Мирсагатов, B. U. Aĭtbaev, V. M. Rubinov

    Мақола19963 иқтибос
    ABI

  14. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20083 иқтибос
    ABI

  15. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI