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Semiconductor materials and devices

277 ta ish

  1. Observation of the Shubnikov–de Haas effect in thin bismuth films

    Yu. F. Komnik, В. В. Андриевскии, А. В. Бутенко

    MaqolaCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19810 iqtibos
    ABI

  2. Transient effects in thin aluminum films in the resistive state

    V. V. Stupakov, V. Yu. Tarenkov

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19810 iqtibos
    ABI

  3. Hydrogen determination in silicon nitride films by the nuclear recoil method

    И. П. Чернов, V. N. Shadrin, Ju.P. Cherdantsev +4

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films19820 iqtibos
    ABI

  4. Critical currents in columnar vanadium films

    V. G. Cherkasova, A. E. Kolinko, A. E. Slatin +1

    MaqolaPhysics of Superconductivity and MagnetismSoviet Journal of Low Temperature Physics19820 iqtibos
    ABI

  5. Thermal stability of optical properties of electron-irradiated GaAs

    D. L. Budnitskii, M. A. Krivov

    MaqolaSemiconductor materials and interfacesRussian Physics Journal19820 iqtibos
    ABI

  6. Electrical properties of fine crystalline and amorphous metal films, obtained by low temperature condensation (Review)

    Yu. F. Komnik

    MaqolaCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19820 iqtibos
    ABI

  7. Nonlinear current-voltage characteristic of a S–<i>c</i>–N type microcontact

    V. A. Khlus

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19830 iqtibos
    ABI

  8. Effect of grain boundary scattering on the TCR of thin tin films

    C. R. Pichard, Yu. F. Komnik, Б. И. Белевцев +1

    MaqolaCopper Interconnects and ReliabilityJournal of Materials Science Letters19830 iqtibos
    ABI

  9. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

    С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

    MaqolaSemiconductor materials and interfacesRussian Physics Journal19830 iqtibos
    ABI

  10. Electron–phonon interaction-induced nonlinearity of the current–voltage characteristic of superconductor–normal-metal point contacts

    I. K. Yanson, Г. В. Камарчук, A. V. Khotkevich

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19840 iqtibos
    ABI

  11. A secondary ion mass spectrometry study of two-layer systems based on tellurium

    В. А. Лабунов, B. Kolosnicin, D. Marton +1

    MaqolaPhase-change materials and chalcogenidesThin Solid Films19840 iqtibos
    ABI

  12. Nonlinear conductivity in island bismuth films

    А. В. Бутенко, E. I. Bukhshtab, V. V. Pilipenko

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19850 iqtibos
    ABI

  13. Two-dimensional charge layer at the boundary between two insulators

    Yu. Z. Kovdrya

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSoviet Journal of Low Temperature Physics19850 iqtibos
    ABI

  14. Investigation of crystal structure of cubic silicon carbide layers

    М. С. Саидов, Kh. A. Shamuratov, Marsel Kadyrov +1

    MaqolaSilicon Carbide Semiconductor Technologiesphysica status solidi (a)19860 iqtibos
    ABI

  15. Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP

    V. N. Brudnyı̆, V. A. Charchenko, N. G. Kolin +3

    MaqolaSemiconductor materials and devicesphysica status solidi (a)19860 iqtibos
    ABI

  16. Localization and inelastic scattering of electrons in point-contact electric conductivity

    I. F. Itskovich, I. O. Kulik, R. I. Shekhter

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19870 iqtibos
    ABI

  17. ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

    Yusuke Mizokawa, Osamu Komoda, Tatsuro Miyasato +3

    MaqolaDiamond and Carbon-based Materials ResearchElectronics and Communications in Japan (Part II Electronics)19870 iqtibos
    ABI

  18. Ion-Molecular Epitaxy

    A. Lyutovich

    BobSemiconductor materials and devices19870 iqtibos
    ABI

  19. Two-dimensional electron gas oscillations in the inversion layer on the surface of an ionic crystal

    A. M. Kosevich, J. C. Granada

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19880 iqtibos
    ABI

  20. Vanadium diffusion in silicon

    G.K. Azimov, S.Z. Zajnabidinov, Yu. I. Kozlov

    MaqolaAdvanced Materials Characterization Techniques19890 iqtibos
    ABI

  21. Metallic point contacts in a pseudoballistic regime. Phonon generation and electron drag

    A. G. Shkorbatov, T. Z. Sarkisyants

    MaqolaForce Microscopy Techniques and ApplicationsSoviet Journal of Low Temperature Physics19890 iqtibos
    ABI

  22. The Aharonov–Bohm effect in narrow-band semiconductors

    É. N. Bogachek

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19900 iqtibos
    ABI

  23. Two-dimensional charge systems in metal-insulator-insulator structures

    Yu. Z. Kovdrya

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19900 iqtibos
    ABI

  24. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

    S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

    MaqolaSilicon Carbide Semiconductor Technologiesphysica status solidi (a)19910 iqtibos
    ABI

  25. IVC studies for <i>S–c–N</i> contacts based on the amorphous superconductor Zr2Ni

    Yu. G. Naĭdyuk, O. E. Kvitnitskaya

    MaqolaInorganic Chemistry and MaterialsSoviet Journal of Low Temperature Physics19910 iqtibos
    ABI