Surface and Thin Film Phenomena
232 ta ish
Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods
Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2
MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 iqtibosABIDIAGONAL AND NONDIAGONAL MATRIX ELEMENTS OF THE EFFECTIVE HAMILTONIAN OF ELECTRONS IN A SEMICONDUCTOR (TAKING INTO ACCOUNT SPIN-ORBIT INTERACTION)
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Akhmedov Bahodir Bahromovich +1
MaqolaSurface and Thin Film PhenomenaEPRA International Journal of Multidisciplinary Research (IJMR)20200 iqtibosABIDetermining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques
Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev
BobSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)20210 iqtibosABI