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Ish: Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy
Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 iqtibosABIApplying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 iqtibosABIStudy of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film
Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 iqtibosABIИзучение критического угла каналирования ионов активных металлов через тонкие пленки алюминия
З. А. Исаханов, Б.Е. Умирзаков, С.С. Насриддинов +2
MaqolaOchiq kirish20210 iqtibosABIEffect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface
G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov
MaqolaOchiq kirishIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibosABI