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13 ta ish

Ish: Method for additional purification of the surface of Si(111) single crystal

  1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    MaqolaOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 iqtibos
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  3. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    MaqolaOchiq kirishElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 iqtibos
    ABI

  4. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    MaqolaOchiq kirishIon-surface interactions and analysisE3S Web of Conferences20234 iqtibos
    ABI

  5. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    MaqolaIon-surface interactions and analysisAIP conference proceedings20224 iqtibos
    ABI

  6. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    MaqolaOchiq kirishSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 iqtibos
    ABI

  7. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    MaqolaOchiq kirishIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 iqtibos
    ABI

  8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    MaqolaMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 iqtibos
    ABI

  9. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    MaqolaOchiq kirishSemiconductor materials and interfacesE3S Web of Conferences20211 iqtibos
    ABI

  10. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20220 iqtibos
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    MaqolaOchiq kirishSemiconductor materials and interfacesФизика и техника полупроводников20220 iqtibos
    ABI

  12. Состав и электронная структура скрытых наноразмерных фаз и слоев BaSi-=SUB=-2-=/SUB=-, созданных в приповерхностной области Si

    Б.Е. Умирзаков, М. Т. Нормурадов, Д.А. Нормуродов +1

    MaqolaOchiq kirish20220 iqtibos
    ABI

  13. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 iqtibos
    ABI