Ushbu ish iqtibos qilgan ishlar

20 ta ish

Ish: Electrodifusion of Manganese Atoms in Silicon

1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

   М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

   MaqolaSemiconductor materials and interfacesApplied Solar Energy201513 iqtibos

   ABIABI:AkademIndex/2026.other.067974

2. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

   М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

   MaqolaSemiconductor materials and interfacesSemiconductors202111 iqtibos

   ABIABI:AkademIndex/2021.article.000422

3. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   MaqolaSemiconductor materials and interfacesSemiconductors20229 iqtibos

   ABIABI:AkademIndex/2022.article.000429

4. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/2026.other.258448

5. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos

   ABIABI:AkademIndex/2023.article.001190

6. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/2023.article.001215

7. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos

   ABIABI:AkademIndex/2023.article.001403

8. Optical Properties of GexSi1 – x Binary Compounds in Silicon

   Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos

   ABIABI:AkademIndex/2023.article.002005

9. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

   Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

   Maqola20175 iqtibos

   ABIABI:AkademIndex/2026.other.550827

10. Solid Solubilities of Impurity Elements in Germanium and Silicon*

    F. A. Trumbore

    Maqola19604 iqtibos

    ABIABI:AkademIndex/2026.other.381593

11. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

    Yogesh Goswami, Pranav Kumar Asthana, Bahniman Ghosh

    Maqola20173 iqtibos

    ABIABI:AkademIndex/2026.other.381579

12. Deep impurity levels and diffusion coefficient of manganese in silicon

    H. Nakashima, Kazuhito Hashimoto

    Maqola19913 iqtibos

    ABIABI:AkademIndex/2026.other.419055

13. Fabrication of ZnS layer on silicon nanopillars surface for photoresistor application

    Jing Liu, Shuaipeng Yue

    Maqola20223 iqtibos

    ABIABI:AkademIndex/2026.other.550832

14. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos

    ABIABI:AkademIndex/2023.article.002461

15. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 iqtibos

    ABIABI:AkademIndex/2023.article.002462

16. On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

    Michael Niehle, Jean‐Baptiste Rodriguez, L. Cerutti +2

    Maqola20172 iqtibos

    ABIABI:AkademIndex/2026.other.381580

17. Theoretical analysis and modelling of degradation for III–V lasers on Si

    Jianzhuo Liu, Mingchu Tang, Huiwen Deng +7

    Maqola20222 iqtibos

    ABIABI:AkademIndex/2026.other.381584

18. Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

    Ahmad Mostafa, Mamoun Medraj

    Sharh maqola20172 iqtibos

    ABIABI:AkademIndex/2026.other.550856

19. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.561356

20. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.561357