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25 ta ish

Ish: Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

  1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20229 iqtibos
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  3. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    MaqolaOchiq kirish20238 iqtibos
    ABI

  4. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos
    ABI

  6. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  7. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    MaqolaOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  8. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Maqola20175 iqtibos
    ABI

  9. Gettering properties of nickel in silicon photocells

    Bakhadirkhanov M.K., Z. T. Kenzhaev, Turekeev Kh. S. +2

    MaqolaOchiq kirishSemiconductor materials and interfacesЖурнал технической физики20224 iqtibos
    ABI

  10. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 iqtibos
    ABI

  11. Effect of nickel doping on the spectral sensitivity of silicon solar cells

    Nurillo Zikrillayev, Z. T. Kenzhaev, Timur Ismailov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesE3S Web of Conferences20234 iqtibos
    ABI

  12. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos
    ABI

  13. Fabrication of ZnS layer on silicon nanopillars surface for photoresistor application

    Jing Liu, Shuaipeng Yue

    Maqola20223 iqtibos
    ABI

  14. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos
    ABI

  15. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 iqtibos
    ABI

  16. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    MaqolaOchiq kirishSemiconductor materials and interfacesE3S Web of Conferences20232 iqtibos
    ABI

  17. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  18. III–V compound materials and lasers on silicon

    Wenyu Yang, Yajie Li, Fangyuan Meng +6

    Maqola20192 iqtibos
    ABI

  19. Photoluminescence and I–V characteristics of ZnS grown on silicon nanoporous pillar array

    Hai Xu, He Shun Jia, Zhi Tao Yao +1

    Maqola20082 iqtibos
    ABI

  20. ZnS thin film deposition on Silicon and glass substrates by Thermionic vacuum Arc

    Mehmet Özkan, N. Ekem, Şuat Pat +1

    Maqola20112 iqtibos
    ABI

  21. Handbook Series on Semiconductor Parameters

    Kitob19962 iqtibos
    ABI

  22. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    MaqolaOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 iqtibos
    ABI

  23. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    MaqolaOchiq kirishMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 iqtibos
    ABI

  24. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos
    ABI

  25. Sarlavhasiz

    Boshqa1 iqtibos
    ABI