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Ish: Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al
A new approach in impurity doping of 4H-SiC using silicidation
Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2
Maqola20134 iqtibosABIThe Method of Solid State Impurity Diffusion and Doping In 4H-SiC
Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1
Maqola20133 iqtibosABIComponent Technologies for Ultra-High-Voltage 4H-SiC pin Diode
Koji Nakayama, Ryosuke Ishii, Katsunori Asano +3
Maqola20112 iqtibosABISelective doping of 4H–SiC by codiffusion of aluminum and boron
Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan +1
Maqola20012 iqtibosABIBoron and aluminum diffusion into 4H–SiC substrates
Andrzej Kubiak, Jacek Rogowski
Maqola20102 iqtibosABIPower bipolar devices based on silicon carbide
P. A. Ivanov, M. E. Levinshteĭn, T. T. Mnatsakanov +2
Maqola20052 iqtibosABIHigh-temperature diffusion doping of porous silicon carbide
M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1
Maqola20082 iqtibosABIBoron diffusion into 6H-SiC through graphite mask
Stanislav I. Soloviev, Ying Gao, X. Wang +1
Maqola20012 iqtibosABI