Ushbu ish iqtibos qilgan ishlar

44 ta ish

Ish: Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

The physics of semiconductor devices
R. H. Rediker
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ABI
Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12
Maqola20088 iqtibos
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Deep level centers in silicon carbide: A review
A. А. Lebedev
Sharh maqola19996 iqtibos
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Investigation of boron diffusion in 6H-SiC
Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan
Maqola20035 iqtibos
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Oxide film assisted dopant diffusion in silicon carbide
Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6
MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
ABI
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
ABI
Influence of Defects on Low Temperature Diffusion of Boron in SiC
I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
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Oxidation kinetics of hot-pressed silicon carbide
Subhash C. Singhal
Maqola19764 iqtibos
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A new approach in impurity doping of 4H-SiC using silicidation
Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2
Maqola20134 iqtibos
ABI
Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
I. G. Atabaev, Kh. N. Juraev, V. A. Pak
MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 iqtibos
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Effect of deep levels on current excitation in 6H-SiC diodes
N.I. Kuznetsov, J. A. Edmond
Maqola19973 iqtibos
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The Method of Solid State Impurity Diffusion and Doping In 4H-SiC
Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1
Maqola20133 iqtibos
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Diffusion of boron in silicon carbide
K. Rüschenschmidt, H. Bracht, Michael Laube +2
Maqola20013 iqtibos
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Vacancy defects in silicon carbide
O. Girka, E. N. Mokhov
Maqola19953 iqtibos
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Boron and aluminum diffusion into 4H–SiC substrates
Andrzej Kubiak, Jacek Rogowski
Maqola20102 iqtibos
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Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
Q. Wahab, A. Ellison, Anne Henry +4
Maqola20002 iqtibos
ABI
Power bipolar devices based on silicon carbide
P. A. Ivanov, M. E. Levinshteĭn, T. T. Mnatsakanov +2
Maqola20052 iqtibos
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Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties
Philip G. Neudeck, C. Fazi
Maqola19982 iqtibos
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High-temperature diffusion doping of porous silicon carbide
M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1
Maqola20082 iqtibos
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Boron diffusion into 6H-SiC through graphite mask
Stanislav I. Soloviev, Ying Gao, X. Wang +1
Maqola20012 iqtibos
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Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron
Ying Gao, Stanislav I. Soloviev, T. S. Sudarshan
Maqola20012 iqtibos
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Material science and device physics in SiC technology for high-voltage power devices
Tsunenobu Kimoto
Maqola20152 iqtibos
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A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum
E. V. Kalinina, V. Kossov, R. R. Yafaev +2
Maqola20102 iqtibos
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Sarlavhasiz
Boshqa2 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI

Ushbu ish iqtibos qilgan ishlar

The physics of semiconductor devices

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Deep level centers in silicon carbide: A review

Investigation of boron diffusion in 6H-SiC

Oxide film assisted dopant diffusion in silicon carbide

Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

Influence of Defects on Low Temperature Diffusion of Boron in SiC

Oxidation kinetics of hot-pressed silicon carbide

A new approach in impurity doping of 4H-SiC using silicidation

Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

Effect of deep levels on current excitation in 6H-SiC diodes

The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

Diffusion of boron in silicon carbide

Vacancy defects in silicon carbide

Boron and aluminum diffusion into 4H–SiC substrates

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Power bipolar devices based on silicon carbide

Nanosecond Risetime Pulse Characterization of SiC p<sup>+</sup>n Junction Diode Breakdown and Switching Properties

High-temperature diffusion doping of porous silicon carbide

Boron diffusion into 6H-SiC through graphite mask

Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron

Material science and device physics in SiC technology for high-voltage power devices

A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

Sarlavhasiz

Sarlavhasiz