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10 ta ish

Ish: On the tensosensitivity of a p-n junction under illumination

  1. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    MaqolaMechanical and Optical ResonatorsSemiconductors20197 iqtibos
    ABI

  2. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

    Paul R. Berger, G. Gulyamov, М. Г. Дадамирзаев +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignRomanian Journal of Physics20244 iqtibos
    ABI

  3. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    MaqolaSemiconductor Quantum Structures and DevicesAIP conference proceedings20233 iqtibos
    ABI

  4. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    MaqolaSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 iqtibos
    ABI

  5. The effect of a heated electron on the VAX of a tunnel diode

    G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1

    MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20232 iqtibos
    ABI

  6. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20182 iqtibos
    ABI

  7. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

    Bahodir Kuchkarov, О. О. Маматкаримов, A. A. Abdulkhayev

    MaqolaGlass properties and applicationsIOP Conference Series Earth and Environmental Science20201 iqtibos
    ABI

  8. Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

    G. Gulyamov, A. G. Gulyamov, Feruza R. Muhitdinova

    Maqolananoparticles nucleation surface interactionsJournal of Modern Physics20160 iqtibos
    ABI

  9. ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE

    I. G. Tursunov, Abdurahim Okhunov, О. О. Маматкаримов

    MaqolaAdvanced Materials and Semiconductor TechnologiesIIUM Engineering Journal20180 iqtibos
    ABI

  10. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

    G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

    MaqolaSemiconductor materials and interfacesAIP conference proceedings20240 iqtibos
    ABI