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Работы, цитирующие эту работу

Работ: 10

Работа: On the tensosensitivity of a p-n junction under illumination

  1. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    СтатьяMechanical and Optical ResonatorsSemiconductors2019Цитирований: 7
    ABI

  2. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

    Paul R. Berger, G. Gulyamov, М. Г. Дадамирзаев +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignRomanian Journal of Physics2024Цитирований: 4
    ABI

  3. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    СтатьяSemiconductor Quantum Structures and DevicesAIP conference proceedings2023Цитирований: 3
    ABI

  4. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 2
    ABI

  5. The effect of a heated electron on the VAX of a tunnel diode

    G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2023Цитирований: 2
    ABI

  6. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2018Цитирований: 2
    ABI

  7. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

    Bahodir Kuchkarov, О. О. Маматкаримов, A. A. Abdulkhayev

    СтатьяGlass properties and applicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 1
    ABI

  8. Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

    G. Gulyamov, A. G. Gulyamov, Feruza R. Muhitdinova

    Статьяnanoparticles nucleation surface interactionsJournal of Modern Physics2016Цитирований: 0
    ABI

  9. ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE

    I. G. Tursunov, Abdurahim Okhunov, О. О. Маматкаримов

    СтатьяAdvanced Materials and Semiconductor TechnologiesIIUM Engineering Journal2018Цитирований: 0
    ABI

  10. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

    G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

    СтатьяSemiconductor materials and interfacesAIP conference proceedings2024Цитирований: 0
    ABI