Chalcogenide Semiconductor Thin Films

503 works

1. Two-stage concentrating systems for pumping of solar lasers

   Sh. I. Klichev, С. А. Бахрамов, A. A. Abdurakhmanov +6

   Articlesolar cell performance optimizationProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20081 citations

   ABIABI:AkademIndex/openalex/2026.other.587094

2. Quantum-Dimensional Near-Surface Recombination of Photocarriers in CdTe Microcrystals

   А. В. Селькин, N. Kh. Yuldashev

   ArticleQuantum Dots Synthesis And PropertiesBulletin of the Russian Academy of Sciences Physics20231 citations

   ABIABI:AkademIndex/openalex/2026.other.591866

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   ArticleSemiconductor materials and interfaces20051 citations

   ABIABI:AkademIndex/openalex/2026.other.609626

4. Energy levels and heat generation of electron-hole pairs in Ge, GaSb, and InAs doped by some compounds of the II–V and II–VI types

   М. С. Саидов

   ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20101 citations

   ABIABI:AkademIndex/openalex/2026.other.610691

5. Characteristic features of the energy spectrum and multiple exciton generation in nanoparticles of PbSe and PbS

   T. A. Dzhalalov, E. Z. Imamov, Р. А. Муминов

   ArticleQuantum Dots Synthesis And PropertiesApplied Solar Energy20111 citations

   ABIABI:AkademIndex/openalex/2026.other.615910

6. Impurity thermovoltaic solar elements. Possible characteristics and alloying

   М. С. Саидов

   ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20091 citations

   ABIABI:AkademIndex/openalex/2026.other.625504

7. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

   R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

   ArticlePhase-change materials and chalcogenidesMaterials science forum20001 citations

   ABIABI:AkademIndex/openalex/2026.other.654952

8. The effective mass of electrons in (InSb)_x·(InTe)_1−x crystals

   I. P. Molodyan, D. N. Nasledov, С. И. Радауцан +1

   ArticleSolid-state spectroscopy and crystallographyphysica status solidi (b)19660 citations

   ABIABI:AkademIndex/openalex/1966.article.000001

9. Investigation of n-CdSp-CdTe Thin Film Heterojunctions

   E. I. Adieovich, Yu. M. Yuabov, G. R. Yagudaev

   ArticleAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19710 citations

   ABIABI:AkademIndex/openalex/1971.article.000009

10. Phase transformations in Nah 3 (SeO 3 ) 2 crystals irradiated with a large gamma-raidation dose

    E.V. Peshikov, L. A. Shuvalov

    ArticleSolid-state spectroscopy and crystallography19730 citations

    ABIABI:AkademIndex/openalex/1973.article.000033

11. A Scanning Electron Microscope Study of In[sub 1−x]Ga[sub x]P

    V. A. Voronin, W. D. JUN. STEWART, Grayson W. Marshall +3

    ArticleSurface and Thin Film PhenomenaJournal of The Electrochemical Society19740 citations

    ABIABI:AkademIndex/openalex/1974.article.000023

12. Electrical and optical properties of the magnetic semiconductor MnTe

    Yu. V. Pereverzev, L. V. Povstyanyi, A. I. Zvyagin

    ArticleHeusler alloys: electronic and magnetic propertiesSoviet Journal of Low Temperature Physics19760 citations

    ABIABI:AkademIndex/openalex/1976.article.000006

13. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

    L. G. Lavrent’eva

    Articlenanoparticles nucleation surface interactionsRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000078

14. Influence of copper impurity and structure defects on the properties of compound CdSnAs2

    Olga V. Voevodina, A. P. Vyatkin, T. V. Vedernikova +3

    ArticleAdvanced Research in Systems and Signal ProcessingRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000080

15. Behavior of copper in gallium arsenide with high tin concentration

    I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

    ArticleSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000114

16. Physical properties of quasi-one-dimensional transition-metal chalcogenides (Review)

    É. A. Pashitskiı̆, I. S. Shchetkin

    ArticleCrystal Structures and PropertiesSoviet Journal of Low Temperature Physics19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000201

17. NEUTRON, X-RAY AND LATTICE DYNAMICAL STUDIES OF Sb₂ S₃

    K. R. Rao, V. M. Padmanabhan, Neutron Physics Division +2

    ArticleChalcogenide Semiconductor Thin FilmsLe Journal de Physique Colloques19810 citations

    ABIABI:AkademIndex/openalex/1981.article.000100

18. Low-temperature thermal conductivity of uniaxially compressed ln4Se3 layered crystals

    E. Anders, I. V. Volchok

    ArticleChalcogenide Semiconductor Thin FilmsSoviet Journal of Low Temperature Physics19810 citations

    ABIABI:AkademIndex/openalex/1981.article.000207

19. Physical properties of Zn /SUB x/ Cd /SUB 1-x/ S films obtained by chemical deposition from the vapor phase in a hydrogen flux

    T. M. Razykov

    ArticleChalcogenide Semiconductor Thin FilmsOSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)19840 citations

    ABIABI:AkademIndex/openalex/1984.article.000118

20. Investigation of illuminance-voltage characteristics for thin-film D-CdTe-n-CdTe-n-CdS structures

    Ш. А. Мирсагатов, K.K. Sabirov

    ArticleChalcogenide Semiconductor Thin Filmsphysica status solidi (a)19850 citations

    ABIABI:AkademIndex/openalex/1985.article.000106

21. Electrical and optical properties of electron-irradiated ZnGeP2

    V. N. Brudnyı̆, V. A. Novikov, E. Popova

    ArticleChalcogenide Semiconductor Thin FilmsRussian Physics Journal19860 citations

    ABIABI:AkademIndex/openalex/1986.article.000025

22. Ellipsometric Investigation of Ag-Doping Profiles in Amorphous Chalcogenide Thin Films

    Vladimír Hönig, V. K. Fedorov, G. Libbmann +1

    ArticlePhase-change materials and chalcogenidesphysica status solidi (a)19860 citations

    ABIABI:AkademIndex/openalex/1986.article.000071

23. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

    D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

    ArticleSemiconductor materials and interfacesphysica status solidi (a)19860 citations

    ABIABI:AkademIndex/openalex/1986.article.000099

24. SnTe-InSe and SnTe-Tl 2 Se systems

    A. Ashirov, A.P. Gurshumov, K. Dovletov

    ArticleSolid-state spectroscopy and crystallographyZhurnal Neorganicheskoj Khimii19860 citations

    ABIABI:AkademIndex/openalex/1986.article.000153

25. Photoelectric properties of In2O3-CdSiAs2 structures

    V. Yu. Rud’, Yu. V. Rud, M. Serginov

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19900 citations

    ABIABI:AkademIndex/openalex/1990.article.000129