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Works cited by this work

8 works

Work: Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201319 citations
    ABI

  2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201516 citations
    ABI

  3. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    ArticleMetal and Thin Film MechanicsTechnical Physics201315 citations
    ABI

  4. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  5. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Article20136 citations
    ABI

  6. Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier

    S. A. Masalov, A. V. Korotchenkov, V. P. Evtikhiev +1

    Article20152 citations
    ABI

  7. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

    С. В. Тихов, О. Н. Горшков, M. N. Koryazhkina +2

    Article20162 citations
    ABI

  8. Untitled

    Other1 citations
    ABI