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Works cited by this work

21 works

Work: Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  3. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    ArticleIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 citations
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesModern Physics Letters B202317 citations
    ABI

  5. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    ArticleMetal and Thin Film MechanicsTechnical Physics201513 citations
    ABI

  6. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  7. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20239 citations
    ABI

  8. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    ArticleSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 citations
    ABI

  9. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Article20237 citations
    ABI

  10. Estimation of lattice strain in ZnO nanoparticles: X-ray peak profile analysis

    P. Bindu, Sabu Thomas

    Article20145 citations
    ABI

  11. Size–strain study of NiO nanoparticles by X-ray powder diffraction line broadening

    N. S. Gonçalves, Juliana Angélica Evangelista de Carvalho, Z.M. Lima +1

    Article20113 citations
    ABI

  12. Localized epitaxial growth of MnSi1.7 on silicon

    Yiling Lian, L. J. Chen

    Article19863 citations
    ABI

  13. Studies of formation of silicides and their barrier heights to silicon

    Karl‐Ragnar Sundström, S. Petersson, P.A. Tove

    Article19733 citations
    ABI

  14. <i>Ab initio</i>study of the band structures of different phases of higher manganese silicides

    Д. Б. Мигас, В. Л. Шапошников, А. Б. Филонов +2

    Article20082 citations
    ABI

  15. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20102 citations
    ABI

  16. Formation and Schottky behavior of manganese silicides on <i>n</i>-type silicon

    M. Eizenberg, K. N. Tu

    Article19822 citations
    ABI

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    ABI

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    ABI

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    Other1 citations
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    Other1 citations
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    Other1 citations
    ABI