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Works cited by this work

16 works

Work: Changes in the electronic structure of the Si surface as a result of ion implantation

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  3. Features of structural adaptability of polymer composite coatings

    Umida Ziyamukhamedova, Alijon Djumabaev, Bakhtiyor Urinov +1

    ArticleAdvanced Theoretical and Applied Studies in Material Sciences and GeometryE3S Web of Conferences202117 citations
    ABI

  4. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  5. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 citations
    ABI

  6. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  7. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  8. An ion track based approach to nano- and micro-electronics

    K. Hoppe, W. R. Fahrner, D. Fink +7

    Article20089 citations
    ABI

  9. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20188 citations
    ABI

  10. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

    Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev

    ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 citations
    ABI

  11. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    ArticleTransition Metal Oxide NanomaterialsTechnical Physics20206 citations
    ABI

  12. Effect of implantation of Ba+ and Nb+ ions on the morphology, composition, and emission properties of Мо (111)

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleAdvanced Chemical Physics StudiesJournal of Communications Technology and Electronics20175 citations
    ABI

  13. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Article20004 citations
    ABI

  14. Pseudogap, Nanocrystals and Electrical Conductivity of Doped Silicate Glass

    G. Abdurakhmanov, V. I. Shimanski, Б. Л. Оксенгендлер +2

    ArticleElectrical and Thermal Properties of MaterialsTechnical Physics20213 citations
    ABI

  15. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 citations
    ABI

  16. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20202 citations
    ABI