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Works citing this work

10 works

Work: Self-organization of nickel atoms in silicon

  1. Silicon Photovoltaic Cells with Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +3

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy202015 citations
    ABI

  2. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +1

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters201912 citations
    ABI

  3. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 citations
    ABI

  4. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics20189 citations
    ABI

  5. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 citations
    ABI

  6. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 citations
    ABI

  7. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20234 citations
    ABI

  8. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 citations
    ABI

  9. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 citations
    ABI

  10. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 citations
    ABI