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Работы, на которые ссылается эта работа

Работ: 16

Работа: The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    СтатьяInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2000Цитирований: 16
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14
    ABI

  5. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Статья2011Цитирований: 9
    ABI

  6. Molecular Beam Epitaxy and Heterostructures

    Leroy L. Chang, K. H. Ploog

    Книга1985Цитирований: 9
    ABI

  7. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 8
    ABI

  8. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2019Цитирований: 5
    ABI

  9. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4
    ABI

  10. Ion-beam-induced amorphization and recrystallization in silicon

    Lourdes Pelaz, Luis A. Marqués, J. Barbolla

    Статья2004Цитирований: 3
    ABI

  11. Semiconductor lasers with internal wavelength selection

    V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskiĭ +10

    Статья2013Цитирований: 3
    ABI

  12. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Статья2001Цитирований: 3
    ABI

  13. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Статья2016Цитирований: 3
    ABI

  14. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Статья2019Цитирований: 3
    ABI

  15. Electronic Structure of Single-Crystal CaF<sub>2</sub>(111) with Nanoscale Phases of Ca and Si

    Yokub Suvonovich Ergahov, B. Umirzakov, Gulmira Khalmuratovna Allayarova

    Статьяnanoparticles nucleation surface interactionsMaterials Sciences and Applications2018Цитирований: 1
    ABI

  16. Без названия

    ДругоеЦитирований: 1
    ABI