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Работы, цитирующие эту работу

Работ: 8

Работа: SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

  1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8
    ABI

  2. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2023Цитирований: 5
    ABI

  3. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2
    ABI

  4. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
    ABI

  5. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    СтатьяMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  6. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1
    ABI

  7. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI

  8. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI