Работы, цитирующие эту работу

Работ: 8

Работа: Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7

   ABIABI:AkademIndex/openalex/2023.article.001190

2. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001804

3. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

   N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

   СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002462

4. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

   Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

   СтатьяSilicon and Solar Cell TechnologiesPhysical Sciences and Technology2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002715

5. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002753

6. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002944

7. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

   Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.002687

8. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   СтатьяSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007427