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Работы, цитирующие эту работу

Работ: 6

Работа: Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

  1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0
    ABI

  2. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0
    ABI

  3. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI

  4. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

    СтатьяSilicon Nanostructures and PhotoluminescenceVacuum2025Цитирований: 0
    ABI

  5. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

    Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  6. The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure

    A. S. Achilov, R. R. Kabulov, O. A. Abdulkhaev +4

    СтатьяAdvanced Semiconductor Detectors and MaterialsSurface Engineering and Applied Electrochemistry2026Цитирований: 0
    ABI