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Работы, цитирующие эту работу

Работ: 9

Работа: Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

  1. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  2. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  3. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  4. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4
    ABI

  5. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3
    ABI

  6. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1
    ABI

  7. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  8. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  9. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0
    ABI