Работы, на которые ссылается эта работа

Работ: 17

Работа: PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

1. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

   Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

   СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 9

   ABIABI:AkademIndex/openalex/2023.article.000670

2. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

   I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

   СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9

   ABIABI:AkademIndex/openalex/2023.article.000847

3. X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons

   Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.241691

4. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

   N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

   СтатьяSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics2021Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279523

5. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279528

6. Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   Статья2023Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.279527

7. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.279519

8. Impedance spectroscopy studies of dual membrane fuel cell

   Daria Vladikova, Z. Stoynov, G. Raikova +7

   Статья2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.279518

9. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

   Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters1999Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.279516

10. Semiconductor detector as ionising radiation dosimeter

    Marat S. Yunusov, A. Akhmadaliev, K. A. Begmatov

    СтатьяRadiation Detection and Scintillator TechnologiesRadiation Physics and Chemistry1995Цитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279517

11. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279520

12. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279521

13. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics2021Цитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279522

14. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279524

15. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279525

16. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279526

17. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.279529