Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
← Назад к работе

Работы, цитирующие эту работу

Работ: 14

Работа: Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  3. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  4. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 16
    ABI

  5. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 8
    ABI

  6. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5
    ABI

  7. Effect of implantation of Ba+ and Nb+ ions on the morphology, composition, and emission properties of Мо (111)

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяAdvanced Chemical Physics StudiesJournal of Communications Technology and Electronics2017Цитирований: 5
    ABI

  8. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
    ABI

  9. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3
    ABI

  10. Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures

    З. А. Исаханов, Tulkin Kodirov, A. S. Halmatov +3

    СтатьяMetal and Thin Film MechanicsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 3
    ABI

  11. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  12. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0
    ABI

  13. Effect of the Implantation of $${\text{O}}_{{\text{2}}}^{ + }$$ Ions on the Composition and Electronic Structure of CdS Films

    Б. Е. Умирзаков, J. Sh. Sodikjanov, З. А. Исаханов +1

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  14. Analysis of the Influence of Formation of Pd Silicides on Surface Layers of Si on the Diffusion of Atoms of Contacting Metal

    Д. А. Ташмухамедова, Kh.E. Abdiev, Soadat Gulyamova +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
    ABI