Работы, цитирующие эту работу

Работ: 6

Работа: Deep level centers in silicon carbide: A review

1. Study of Silicide Formation in Large Diameter Monocrystalline Silicon

   A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.303746

2. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

   I. G. Atabaev, Kh. N. Juraev

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.390749

3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy2018Цитирований: 1

   ABIABI:AkademIndex/openalex/2018.article.000197

4. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

   A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000211

5. Quenching Photoconductivity and Photoelectric Memory in 6H-SiC

   M. Duisenbaev

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000332

6. CVC Structure of PtSi - Si&lt;Pt&gt;-M in a Wide Range of Temperatures

   A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Tokhirjon U. Atamirzaev +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.004255