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Работы, на которые ссылается эта работа
Работ: 29
Работа: Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
Single-layer MoS2 transistors
Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2
Статья2011Цитирований: 8ABIThe Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1
СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5ABIImpact of self-heating effect on the performance of hybrid FinFET
Rajeev Pankaj Nelapati, K. Sivasankaran
Статья2018Цитирований: 5ABIPhysical origin of negative differential resistance in SOI transistors
Liam McDaid, Steven Hall, Phil Mellor +2
Статья1989Цитирований: 5ABIThermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Matthew A. Panzer, Michael Shandalov, Jeremy Rowlette +4
Статья2009Цитирований: 4ABIMOSFET scaling: Impact of two-dimensional channel materials
R. Granzner, Zhansong Geng, W. Kinberger +1
Статья2016Цитирований: 4ABIChannel Length Scaling of MoS<sub>2</sub> MOSFETs
Han Liu, Adam T. Neal, Peide D. Ye
Статья2012Цитирований: 3ABISimulation of 50-nm Gate Graphene Nanoribbon Transistors
Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner +2
Статья2016Цитирований: 2ABIAdvances in MoS2-Based Field Effect Transistors (FETs)
Xin Tong, Eric Ashalley, Feng Lin +2
Обзорная статья2015Цитирований: 2ABIThe contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2
СтатьяGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 2ABI