Работы, цитирующие эту работу

Работ: 6

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

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2. Silicon thermophysical properties under thermal loading

   D. A. Vakhabov, A. S. Zakirov, Kh. T. Igamberdyev +5

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   ABIABI:AkademIndex/openalex/1988.article.000107

3. On the epitaxy of aluminum nitride on silicon substrates in a chloride-hydride process

   A. N. Efimov, Andrew O. Lebedev, A. Tsaregorodtsev

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000132

4. Radiation Hardness of Silicon Carbide

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   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000098

5. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

   A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000211

6. Metrological use of spectral validation for environmental monitoring and their benefits in the Regions of Uzbekistan

   Kakhramon R. Ruzmatov

   СтатьяPharmaceutical Quality and CounterfeitingAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.004451