Работы, цитирующие эту работу

Работ: 3

Работа: The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.079735

2. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.199258

3. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

   M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.213643