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A. É. Atamuratov

37 та иш

Urgench State University 2 Department of Physics, , 740013 Urganch, Uzbekistan

  1. Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

    Jiandong Wei, S. F. Li, A. É. Atamuratov +2

    МақолаForce Microscopy Techniques and ApplicationsApplied Physics Letters20100 иқтибос
    ABI

  2. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

    A. É. Atamuratov, R. Granzner, M. Kittler +3

    БобSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 иқтибос
    ABI

  3. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 иқтибос
    ABI

  4. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    МақолаAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 иқтибос
    ABI

  5. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

    A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

    Мақола2D Materials and Applications20220 иқтибос
    ABI

  6. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

    А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

    МақолаAdvanced Memory and Neural Computing20220 иқтибос
    ABI

  7. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    МақолаAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 иқтибос
    ABI

  8. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesJournal of Computational Electronics20250 иқтибос
    ABI

  9. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  10. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  11. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

    A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

    ПрепринтSemiconductor Quantum Structures and DevicesResearch Square20250 иқтибос
    ABI

  12. First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

    M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2

    Мақола2D Materials and ApplicationsEast European Journal of Physics20260 иқтибос
    ABI