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Ушбу ишга иқтибос қилган ишлар

20 та иш

Иш: Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

  1. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    МақолаAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 иқтибос
    ABI

  2. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    МақолаAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations20249 иқтибос
    ABI

  3. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    МақолаAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 иқтибос
    ABI

  4. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    МақолаTransition Metal Oxide NanomaterialsTechnical Physics20206 иқтибос
    ABI

  5. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 иқтибос
    ABI

  6. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    МақолаSemiconductor materials and interfacesSemiconductors20204 иқтибос
    ABI

  7. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    МақолаSemiconductor materials and devicesTechnical Physics Letters20204 иқтибос
    ABI

  8. Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Eshboy Rabbimov +2

    МақолаChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20193 иқтибос
    ABI

  9. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос
    ABI

  10. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 иқтибос
    ABI

  11. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 иқтибос
    ABI

  12. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос
    ABI

  13. Electronic Structure of Single-Crystal CaF&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;(111) with Nanoscale Phases of Ca and Si

    Yokub Suvonovich Ergahov, B. Umirzakov, Gulmira Khalmuratovna Allayarova

    Мақолаnanoparticles nucleation surface interactionsMaterials Sciences and Applications20181 иқтибос
    ABI

  14. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science20201 иқтибос
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос
    ABI

  16. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

    МақолаTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20200 иқтибос
    ABI

  17. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20210 иқтибос
    ABI

  18. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

    S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

    МақолаIon-surface interactions and analysisCoatings20240 иқтибос
    ABI

  19. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    МақолаSemiconductor materials and interfaces20240 иқтибос
    ABI

  20. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesMaterials Today Communications20260 иқтибос
    ABI